IRF7904PBF
- Mfr.Part #
- IRF7904PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 7.6A/11A 8SOIC
- Stock
- 17,935
- In Stock :
- 17,935
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Number of Pins :
- 8
- Max Power Dissipation :
- 2W
- Published :
- 2006
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 4.5V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 4.9784mm
- Power - Max :
- 1.4W 2W
- Current Rating :
- 7.6A
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 30V
- REACH SVHC :
- No SVHC
- Series :
- HEXFET®
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Continuous Drain Current (ID) :
- 11A
- Recovery Time :
- 17 ns
- Threshold Voltage :
- 2.25V
- FET Type :
- 2 N-Channel (Dual)
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 30V
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 910pF @ 15V
- Packaging :
- Tube
- Number of Elements :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A 11A
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.25V @ 25μA
- Lead Free :
- Exempt
- Width :
- 3.9878mm
- FET Feature :
- Logic Level Gate
- Height :
- 1.4986mm
- Power Dissipation :
- 2W
- Base Part Number :
- IRF7904PBF
- Rds On (Max) @ Id, Vgs :
- 16.2m Ω @ 7.6A, 10V
- Datasheets
- IRF7904PBF

IRF7904PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at
IRF7904PBF Description
HEXFET is trademark of power MOSFET developed by International Rectifier. As shown silicon oxide layer between gate and source regions can be punctured by exceeding its dielectric strength.
IRF7904PBF Applications
Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
IRF7904PBF Features
Very Low RDS(on) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage
and Current
20V VGS Max. Gate Rating
Improved Body Diode Reverse Recovery
100% Tested for RG
Lead-Free
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