IRF7904PBF

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Mfr.Part #
IRF7904PBF
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET 2N-CH 30V 7.6A/11A 8SOIC
Stock
17,935
In Stock :
17,935

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Arrays
Number of Pins :
8
Max Power Dissipation :
2W
Published :
2006
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 4.5V
Gate to Source Voltage (Vgs) :
20V
Length :
4.9784mm
Power - Max :
1.4W 2W
Current Rating :
7.6A
Mount :
Surface Mount
Voltage - Rated DC :
30V
REACH SVHC :
No SVHC
Series :
HEXFET®
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Continuous Drain Current (ID) :
11A
Recovery Time :
17 ns
Threshold Voltage :
2.25V
FET Type :
2 N-Channel (Dual)
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
30V
RoHS Status :
RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds :
910pF @ 15V
Packaging :
Tube
Number of Elements :
2
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Dual
Current - Continuous Drain (Id) @ 25°C :
7.6A 11A
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
2.25V @ 25μA
Lead Free :
Exempt
Width :
3.9878mm
FET Feature :
Logic Level Gate
Height :
1.4986mm
Power Dissipation :
2W
Base Part Number :
IRF7904PBF
Rds On (Max) @ Id, Vgs :
16.2m Ω @ 7.6A, 10V
Datasheets
IRF7904PBF
Introducing Transistors - FETs, MOSFETs - Arrays Infineon Technologies IRF7904PBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Base Part Number:IRF7904PBF, IRF7904PBF pinout, IRF7904PBF datasheet PDF, IRF7904PBF amp .Beyond Transistors - FETs, MOSFETs - Arrays Infineon Technologies IRF7904PBF ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF7904PBF


IRF7904PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at

IRF7904PBF         Description

 

HEXFET is trademark of power MOSFET developed by International Rectifier.  As shown silicon oxide layer between gate and source regions can be punctured by exceeding its dielectric strength.

 

IRF7904PBF                 Applications


 Dual SO-8 MOSFET for POL

Converters in Notebook Computers, Servers,

Graphics Cards, Game Consoles

and Set-Top Box

 

IRF7904PBF                      Features    


 Very Low RDS(on) at 4.5V VGS

 Low Gate Charge

 Fully Characterized Avalanche Voltage

 and Current

 20V VGS Max. Gate Rating

 Improved Body Diode Reverse Recovery

 100% Tested for RG

 Lead-Free

 




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