IRF7902PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On Max :

22.6 mΩ

Series :

HEXFET®

Width :

3.9878mm

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2W

Input Capacitance :

580pF

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 15V

Drain to Source Resistance :

18.7mOhm

Published :

2006

FET Type :

2 N-Channel (Dual)

Length :

4.9784mm

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

22.6mOhm @ 6.4A, 10V

Base Part Number :

IRF7902PBF

Height :

1.4986mm

Continuous Drain Current (ID) :

9.7A

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

6.4A 9.7A

Gate to Source Voltage (Vgs) :

20V

Rise Time :

8.6ns

Current Rating :

6.4A

Mount :

Surface Mount

Max Operating Temperature :

150°C

Supplier Device Package :

8-SO

FET Feature :

Logic Level Gate

Max Power Dissipation :

2W

Lead Free :

Lead Free

Power - Max :

1.4W 2W

Resistance :

22.6mOhm

Gate Charge (Qg) (Max) @ Vgs :

6.9nC @ 4.5V

Number of Pins :

8

Radiation Hardening :

No

Packaging :

Tube

Voltage - Rated DC :

30V

Element Configuration :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)