IRF7820PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

4V

Number of Pins :

8

Vgs(th) (Max) @ Id :

5V @ 100µA

Height :

1.5mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Vgs (Max) :

±20V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Length :

5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

4mm

Nominal Vgs :

4 V

REACH SVHC :

No SVHC

Power Dissipation-Max :

2.5W Ta

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Packaging :

Tube

Published :

2012

Rds On (Max) @ Id, Vgs :

78m Ω @ 2.2A, 10V

Element Configuration :

Single

Terminal Form :

Gull wing

Power Dissipation :

2.5W

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 100V

Continuous Drain Current (ID) :

3.7A

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

200V

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Radiation Hardening :

No

Turn On Delay Time :

7.1 ns

Rise Time :

3.2ns

Terminal Position :

Dual

Lead Free :

Lead Free

Fall Time (Typ) :

12 ns

Number of Terminations :

8