IRF7811AVPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

14m Ω @ 15A, 4.5V

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2004

Drain-source On Resistance-Max :

0.014Ohm

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Terminal Position :

Dual

JEDEC-95 Code :

MS-012AA

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1801pF @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-30 Code :

R-PDSO-G8

Power Dissipation-Max :

2.5W Ta

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

100A

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 5V

Qualification Status :

Not Qualified

Packaging :

Tube

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

10.8A

Current - Continuous Drain (Id) @ 25°C :

10.8A Ta