IRF7807VPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Termination :

SMD/SMT

Terminal Position :

Dual

Published :

2003

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Number of Terminations :

8

Fall Time (Typ) :

2.2 ns

Mounting Type :

Surface Mount

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Length :

4.9784mm

Vgs (Max) :

±20V

Lead Free :

Lead Free

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Dual Supply Voltage :

30V

Terminal Form :

Gull wing

Voltage - Rated DC :

30V

Radiation Hardening :

No

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.025Ohm

Power Dissipation :

2.5W

Rise Time :

1.2ns

Row Spacing :

6.3 mm

Transistor Element Material :

SILICON

Turn On Delay Time :

6.3 ns

Current Rating :

8.3A

Number of Elements :

1

ECCN Code :

EAR99

Nominal Vgs :

3 V

Drain to Source Breakdown Voltage :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

11 ns

Packaging :

Tube

Width :

3.9878mm

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 4.5V

Continuous Drain Current (ID) :

8.3A

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

1.4986mm