IRF7807D1TRPBF

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Mfr.Part #
IRF7807D1TRPBF
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 8.3A 8SO
Stock
26,046
In Stock :
26,046

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Mounting Type :
Surface Mount
Current Rating :
8.3A
FET Feature :
Schottky Diode (Isolated)
Gate to Source Voltage (Vgs) :
12V
Vgs(th) (Max) @ Id :
1V @ 250μA
Rds On (Max) @ Id, Vgs :
25m Ω @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C :
8.3A Ta
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Power Dissipation-Max :
2.5W Ta
RoHS Status :
RoHS Compliant
Number of Pins :
8
Operating Mode :
ENHANCEMENT MODE
Width :
3.9878mm
ECCN Code :
EAR99
Height :
1.4986mm
Mount :
Surface Mount
Length :
4.9784mm
Vgs (Max) :
±12V
Published :
2004
Drive Voltage (Max Rds On,Min Rds On) :
4.5V
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 5V
Voltage - Rated DC :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Packaging :
Tape and Reel (TR)
Power Dissipation :
1.6W
Series :
FETKY™
Continuous Drain Current (ID) :
8.3A
Drain to Source Breakdown Voltage :
30V
Lead Free :
Lead Free
Datasheets
IRF7807D1TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7807D1TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, IRF7807D1TRPBF pinout, IRF7807D1TRPBF datasheet PDF, IRF7807D1TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7807D1TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF7807D1TRPBF


N-Channel Tape & Reel (TR) 25m Ω @ 7A, 4.5V ±12V 17nC @ 5V 8-SOIC (0.154, 3.90mm Width)

IRF7807D1TRPBF Overview


Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.3A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V).

IRF7807D1TRPBF Features


a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage


IRF7807D1TRPBF Applications


There are a lot of Infineon Technologies
IRF7807D1TRPBF applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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