IRF7757TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Power - Max :

1.2W

Current - Continuous Drain (Id) @ 25°C :

4.8A

Nominal Vgs :

1.2 V

Termination :

SMD/SMT

Turn On Delay Time :

9.5 ns

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Published :

2005

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

20V

FET Feature :

Logic Level Gate

Mount :

Surface Mount

Continuous Drain Current (ID) :

4.8A

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

Rds On (Max) @ Id, Vgs :

35mOhm @ 4.8A, 4.5V

Gate to Source Voltage (Vgs) :

12V

Power Dissipation :

1.2W

Number of Pins :

8

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Radiation Hardening :

No

Drain to Source Resistance :

35mOhm

Rise Time :

9.2ns

Turn-Off Delay Time :

36 ns

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

20V

RoHS Status :

RoHS Compliant

Input Capacitance :

1.34nF

Threshold Voltage :

1.2V

Supplier Device Package :

8-TSSOP

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Rds On Max :

35 mΩ

Fall Time (Typ) :

14 ns

Drain to Source Voltage (Vdss) :

20V

Max Operating Temperature :

150°C

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.2W

Input Capacitance (Ciss) (Max) @ Vds :

1340pF @ 15V

Element Configuration :

Dual