IRF7755GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Continuous Drain Current (ID) :

3.9A

Published :

2009

Max Power Dissipation :

1W

Supplier Device Package :

8-TSSOP

Nominal Vgs :

-1.2 V

Drain to Source Voltage (Vdss) :

20V

Max Operating Temperature :

150°C

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Pins :

8

FET Feature :

Logic Level Gate

Base Part Number :

IRF7755GPBF

Number of Elements :

2

Rds On Max :

51 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

1090pF @ 15V

Rds On (Max) @ Id, Vgs :

51mOhm @ 3.7A, 4.5V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1W

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

FET Type :

2 P-Channel (Dual)

Series :

HEXFET®

Power - Max :

1W

REACH SVHC :

No SVHC

Input Capacitance :

1.09nF

Current - Continuous Drain (Id) @ 25°C :

3.9A

Packaging :

Cut Tape (CT)

Drain to Source Breakdown Voltage :

-20V

Gate to Source Voltage (Vgs) :

20V