IRF7755

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

3.9A

Qualification Status :

Not Qualified

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

61 ns

Transistor Element Material :

SILICON

Max Power Dissipation :

1W

JEDEC-95 Code :

MO-153AA

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Published :

2007

Rise Time :

13ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Power - Max :

1W

Turn-Off Delay Time :

89 ns

Drain-source On Resistance-Max :

0.051Ohm

Voltage - Rated DC :

-20V

RoHS Status :

Non-RoHS Compliant

Length :

3mm

Rds On (Max) @ Id, Vgs :

51m Ω @ 3.7A, 4.5V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Code :

e3

Number of Elements :

2

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Drain to Source Breakdown Voltage :

-20V

Mounting Type :

Surface Mount

Turn On Delay Time :

9 ns

Additional Feature :

High Reliability

Number of Pins :

8

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1090pF @ 15V

Peak Reflow Temperature (Cel) :

260

FET Type :

2 P-Channel (Dual)

Number of Terminations :

8

Lead Free :

Contains Lead

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Height :

1mm

Width :

4.4mm

Current Rating :

-3.7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Series :

HEXFET®