IRF7754GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

IRF7754GPBF

Max Power Dissipation :

1W

Radiation Hardening :

No

Power - Max :

1W

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

12V

Current - Continuous Drain (Id) @ 25°C :

5.5A

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

5.5A

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Turn-Off Delay Time :

267 ns

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

1W

Rds On Max :

25 mΩ

Rise Time :

18ns

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

1.984nF

Number of Elements :

2

Turn On Delay Time :

9.8 ns

Rds On (Max) @ Id, Vgs :

25mOhm @ 5.4A, 4.5V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1984pF @ 6V

Drain to Source Breakdown Voltage :

-12V

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

191 ns

Supplier Device Package :

8-TSSOP

Element Configuration :

Dual

Max Operating Temperature :

150°C

FET Type :

2 P-Channel (Dual)

FET Feature :

Logic Level Gate

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Published :

2009

Number of Pins :

8