IRF7751TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Published :

2006

Supplier Device Package :

8-TSSOP

Nominal Vgs :

-2.5 V

Termination :

SMD/SMT

Power Dissipation :

1W

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Power - Max :

1W

Fall Time (Typ) :

80 ns

FET Feature :

Logic Level Gate

Rise Time :

16ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-30V

Number of Pins :

8

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1464pF @ 25V

Drain to Source Resistance :

35mOhm

Mounting Type :

Surface Mount

Dual Supply Voltage :

-30V

Base Part Number :

IRF7751PBF

Turn-Off Delay Time :

155 ns

Current - Continuous Drain (Id) @ 25°C :

4.5A

Input Capacitance :

1.464nF

Rds On Max :

35 mΩ

Number of Elements :

2

Continuous Drain Current (ID) :

-4.5A

Threshold Voltage :

-2.5V

Drain to Source Voltage (Vdss) :

30V

FET Type :

2 P-Channel (Dual)

Max Power Dissipation :

1W

Rds On (Max) @ Id, Vgs :

35mOhm @ 4.5A, 10V

Max Operating Temperature :

150°C

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)