IRF7751

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Mounting Type :

Surface Mount

Voltage - Rated DC :

-30V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Drain-source On Resistance-Max :

0.035Ohm

ECCN Code :

EAR99

Published :

2007

Drain to Source Breakdown Voltage :

-30V

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1464pF @ 25V

Series :

HEXFET®

Terminal Form :

Gull wing

Number of Elements :

2

JEDEC-95 Code :

MO-153AA

Mount :

Surface Mount

Terminal Finish :

MATTE TIN

Continuous Drain Current (ID) :

4.5A

Current Rating :

-4.5A

Additional Feature :

High Reliability

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

35m Ω @ 4.5A, 10V

Number of Terminations :

8

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

JESD-30 Code :

R-PDSO-G8

Packaging :

Tube

Transistor Application :

SWITCHING

Max Power Dissipation :

1W