IRF7750TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 P-Channel (Dual)

Turn-Off Delay Time :

180 ns

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 5V

Drain to Source Voltage (Vdss) :

20V

Continuous Drain Current (ID) :

4.7A

Number of Elements :

2

Published :

2009

Height :

1.0414mm

Gate to Source Voltage (Vgs) :

12V

Nominal Vgs :

-1.2 V

Max Operating Temperature :

150°C

Threshold Voltage :

-1.2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Power Dissipation :

1W

Radiation Hardening :

No

Termination :

SMD/SMT

Element Configuration :

Dual

Supplier Device Package :

8-TSSOP

Input Capacitance :

1.7nF

Mount :

Surface Mount

Drain to Source Resistance :

55mOhm

Current - Continuous Drain (Id) @ 25°C :

4.7A

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Series :

HEXFET®

REACH SVHC :

No SVHC

Fall Time (Typ) :

210 ns

Base Part Number :

IRF7750PBF

Rds On (Max) @ Id, Vgs :

30mOhm @ 4.7A, 4.5V

Mounting Type :

Surface Mount

Power - Max :

1W

Turn On Delay Time :

15 ns

Width :

4.4958mm

Drain to Source Breakdown Voltage :

-20V

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 15V

Rise Time :

54ns

Number of Pins :

8

Dual Supply Voltage :

-20V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1W

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Length :

3.0988mm

Min Operating Temperature :

-55°C

Rds On Max :

30 mΩ