IRF7750

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Voltage - Rated DC :

-20V

Mount :

Surface Mount

HTS Code :

8541.29.00.95

RoHS Status :

Non-RoHS Compliant

JEDEC-95 Code :

MO-153AA

Number of Elements :

2

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 5V

Base Part Number :

IRF7750

Drain to Source Voltage (Vdss) :

20V

Lead Free :

Contains Lead

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Max Power Dissipation :

1W

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.03Ohm

FET Type :

2 P-Channel (Dual)

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 15V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-20V

Published :

2007

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

4.7A

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

30m Ω @ 4.7A, 4.5V

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Qualification Status :

Not Qualified

Current Rating :

-4.7A

Additional Feature :

High Reliability

JESD-30 Code :

R-PDSO-G8

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR