IRF7555TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

8

Turn-Off Delay Time :

60 ns

FET Feature :

Logic Level Gate

Base Part Number :

IRF7555PBF

Number of Elements :

2

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Voltage - Rated DC :

-20V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Current - Continuous Drain (Id) @ 25°C :

4.3A

Turn On Delay Time :

10 ns

Fall Time (Typ) :

64 ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Rise Time :

46ns

Power - Max :

1.25W

Gate to Source Voltage (Vgs) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

55 mΩ

Mount :

Surface Mount

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Current Rating :

-4.3A

Supplier Device Package :

Micro8™

Resistance :

55mOhm

Continuous Drain Current (ID) :

-4.3A

Power Dissipation :

1.25W

Length :

3mm

Max Power Dissipation :

1.25W

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1066pF @ 10V

Rds On (Max) @ Id, Vgs :

55mOhm @ 4.3A, 4.5V

FET Type :

2 P-Channel (Dual)

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Input Capacitance :

1.066nF

Min Operating Temperature :

-55°C

Element Configuration :

Dual

Width :

3mm

Height :

860μm

Drain to Source Resistance :

55mOhm

Published :

2005

Drain to Source Breakdown Voltage :

-20V