IRF7530TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current Rating :

5.4A

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.4A, 4.5V

Terminal Form :

Gull wing

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

20V

Threshold Voltage :

1.2V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

FET Type :

2 N-Channel (Dual)

FET Feature :

Standard

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Element Configuration :

Dual

Base Part Number :

IRF7530PBF

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

16 ns

Number of Elements :

2

Power Dissipation :

1.3W

Resistance :

30mOhm

Nominal Vgs :

1.2 V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn)

Rise Time :

11ns

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

ULTRA LOW RESISTANCE

Max Power Dissipation :

1.3W

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

5.4A

Lead Free :

Lead Free

Height :

860μm

Pulsed Drain Current-Max (IDM) :

40A

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Avalanche Energy Rating (Eas) :

33 mJ

Number of Terminations :

8

Published :

2004

Number of Pins :

8

Turn On Delay Time :

8.5 ns

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Length :

3mm

Drain to Source Breakdown Voltage :

20V

Width :

3mm

Series :

HEXFET®

Turn-Off Delay Time :

36 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON