IRF7530TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

33 mJ

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

40A

Base Part Number :

IRF7530

Surface Mount :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Power - Max :

1.3W

DS Breakdown Voltage-Min :

20V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5.4A

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.03Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Additional Feature :

High Reliability

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Published :

2004

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

S-PDSO-G8

FET Feature :

Standard

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.4A, 4.5V

Drain Current-Max (Abs) (ID) :

5.4A

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)