IRF7530PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Packaging :

Tube

ECCN Code :

EAR99

Height :

910μm

Number of Elements :

2

Drain-source On Resistance-Max :

0.03Ohm

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Additional Feature :

High Reliability

Drain to Source Breakdown Voltage :

20V

Number of Pins :

8

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Length :

3.048mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Operating Temperature :

150°C

Power Dissipation :

1.3W

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

12V

Voltage - Rated DC :

20V

Base Part Number :

IRF7530PBF

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.4A, 4.5V

Continuous Drain Current (ID) :

5.4A

Published :

2004

Rise Time :

11ns

FET Type :

2 N-Channel (Dual)

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Lead Free :

Lead Free

Max Power Dissipation :

1.3W

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Series :

HEXFET®

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Pulsed Drain Current-Max (IDM) :

40A

Width :

3.048mm

FET Feature :

Standard

Avalanche Energy Rating (Eas) :

33 mJ

Fall Time (Typ) :

16 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

36 ns

Current Rating :

5.4A

Turn On Delay Time :

8.5 ns

RoHS Status :

ROHS3 Compliant