IRF7526D1PBF
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- Mfr.Part #
- IRF7526D1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 2A MICRO8
- Stock
- 79
- In Stock ：
- 79
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 800mW
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- FET Feature :
- Schottky Diode (Isolated)
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 25V
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- -2A
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Power Dissipation-Max :
- 1.25W Ta
- Series :
- FETKY™
- Number of Pins :
- 8
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Published :
- 2005
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 1.2A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- -30V
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IRF7526D1PBF
P-Channel Tube 200m Ω @ 1.2A, 10V ±20V 180pF @ 25V 11nC @ 10V 30V 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
IRF7526D1PBF Overview
The maximum input capacitance of this device is 180pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -2A.When VGS=-30V, and ID flows to VDS at -30VVDS, the drain-source breakdown voltage is -30V in this device.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRF7526D1PBF Features
a continuous drain current (ID) of -2A
a drain-to-source breakdown voltage of -30V voltage
a 30V drain to source voltage (Vdss)
IRF7526D1PBF Applications
There are a lot of Infineon Technologies
IRF7526D1PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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