IRF7521D1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

700mV @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Drain to Source Voltage (Vdss) :

20V

Rds On Max :

135 mΩ

Rise Time :

24ns

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Input Capacitance :

260pF

Drain to Source Breakdown Voltage :

20V

FET Feature :

Schottky Diode (Isolated)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Power Dissipation-Max :

1.3W Ta

Power Dissipation :

1.25W

Number of Pins :

8

Supplier Device Package :

Micro8™

Vgs (Max) :

±12V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

15 ns

Drain to Source Resistance :

135mOhm

Turn On Delay Time :

5.7 ns

Series :

FETKY™

Fall Time (Typ) :

16 ns

Continuous Drain Current (ID) :

2.4A

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

135mOhm @ 1.7A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 15V

Operating Temperature :

-55°C~150°C TJ