IRF7509TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

IRF7509

Qualification Status :

Not Qualified

ECCN Code :

EAR99

FET Type :

N and P-Channel

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Elements :

2

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

Published :

1998

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

110m Ω @ 1.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.11Ohm

Terminal Finish :

Matte Tin (Sn)

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

2.7A 2A

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

21A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

1.25W

Transistor Element Material :

SILICON

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

2.7A