IRF7507PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

140m Ω @ 1.7A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.4A 1.7A

Continuous Drain Current (ID) :

2.4A

FET Type :

N and P-Channel

REACH SVHC :

No SVHC

Number of Elements :

2

Base Part Number :

IRF7507PBF

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 15V

Max Power Dissipation :

1.25W

Number of Terminations :

8

Max Operating Temperature :

150°C

Nominal Vgs :

700 mV

Height :

910μm

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

ECCN Code :

EAR99

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

3.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.14Ohm

Number of Pins :

8

Power Dissipation :

1.25W

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

19A

Published :

1998

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

20V

Series :

HEXFET®

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

1.3A

Packaging :

Tube

DS Breakdown Voltage-Min :

20V

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

700mV @ 250μA (Min)

Width :

3.05mm