IRF7506TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

-30V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Resistance :

270mOhm

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

1V @ 250μA

Continuous Drain Current (ID) :

-1.7A

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Radiation Hardening :

No

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

9.6A

Height :

910μm

Fall Time (Typ) :

9.3 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Termination :

SMD/SMT

Mounting Type :

Surface Mount

FET Type :

2 P-Channel (Dual)

Number of Pins :

8

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

1.25W

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Rds On (Max) @ Id, Vgs :

270m Ω @ 1.2A, 10V

Length :

3.048mm

Dual Supply Voltage :

-30V

Number of Elements :

2

Element Configuration :

Dual

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

1.7A

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Width :

3.048mm

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

IRF7506PBF

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Max Power Dissipation :

1.25W

Threshold Voltage :

-1V

Published :

1997

Turn On Delay Time :

9.7 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Turn-Off Delay Time :

19 ns

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Rise Time :

12ns

Nominal Vgs :

-1 V

REACH SVHC :

No SVHC

Mount :

Surface Mount