IRF7504TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

43 ns

REACH SVHC :

No SVHC

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Threshold Voltage :

-700mV

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 4.5V

Max Power Dissipation :

1.25W

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

12V

Resistance :

270mOhm

Voltage - Rated DC :

-20V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

38 ns

Drain to Source Breakdown Voltage :

-20V

Height :

860μm

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Element Configuration :

Dual

Width :

3mm

Lead Free :

Lead Free

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 15V

Radiation Hardening :

No

Base Part Number :

IRF7504PBF

Contact Plating :

Tin

Rise Time :

35ns

Vgs(th) (Max) @ Id :

700mV @ 250μA

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Type :

2 P-Channel (Dual)

Rds On (Max) @ Id, Vgs :

270m Ω @ 1.2A, 4.5V

Transistor Element Material :

SILICON

Current Rating :

-1.7A

Pulsed Drain Current-Max (IDM) :

9.6A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Length :

3mm

Published :

1997

JESD-609 Code :

e3

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

1.25W

Continuous Drain Current (ID) :

-1.7A

Number of Pins :

8

Mount :

Surface Mount

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

1.7A

Number of Elements :

2

Turn On Delay Time :

9.1 ns