IRF7504TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Power - Max :

1.25W

ECCN Code :

EAR99

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Base Part Number :

IRF7504

DS Breakdown Voltage-Min :

20V

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

270m Ω @ 1.2A, 4.5V

Published :

1997

Drain-source On Resistance-Max :

0.27Ohm

Drain Current-Max (Abs) (ID) :

1.7A

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 4.5V

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

9.6A

FET Type :

2 P-Channel (Dual)

Current - Continuous Drain (Id) @ 25°C :

1.7A

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

700mV @ 250μA

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified