IRF7501TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

2.4A

Series :

HEXFET®

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

14A

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Power - Max :

1.25W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 4.5V

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

700mV @ 250μA

Base Part Number :

IRF7501

Number of Elements :

2

RoHS Status :

Non-RoHS Compliant

Published :

1998

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-G8

DS Breakdown Voltage-Min :

20V

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.135Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Current - Continuous Drain (Id) @ 25°C :

2.4A

Packaging :

Cut Tape (CT)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 15V

Surface Mount :

yes