IRF7476TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

15A

Element Configuration :

Single

Rise Time :

29ns

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

2550pF @ 6V

Terminal Form :

Gull wing

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 4.5V

Series :

HEXFET®

Power Dissipation-Max :

2.5W Ta

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Turn-Off Delay Time :

19 ns

Rds On (Max) @ Id, Vgs :

8m Ω @ 15A, 4.5V

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Radiation Hardening :

No

Fall Time (Typ) :

8.3 ns

Width :

3.9878mm

Drain to Source Breakdown Voltage :

12V

Mount :

Surface Mount

Height :

1.4986mm

Length :

4.9784mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

FET Type :

N-Channel

Published :

2006

Turn On Delay Time :

11 ns

Factory Lead Time :

12 Weeks

Vgs (Max) :

±12V