IRF7389TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel

ECCN Code :

EAR99

Height :

1.4986mm

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Transistor Element Material :

SILICON

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2004

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.8A, 10V

Pulsed Drain Current-Max (IDM) :

30A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Number of Pins :

8

Terminal Position :

Dual

Width :

3.9878mm

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

1V

Lead Free :

Contains Lead, Lead Free

Base Part Number :

IRF7389PBF

Transistor Application :

SWITCHING

Length :

4.9784mm

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Resistance :

29mOhm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

32 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Rise Time :

13ns

Drain to Source Breakdown Voltage :

30V

Current Rating :

7.3A

Number of Channels :

1

Row Spacing :

6.3 mm

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Turn-Off Delay Time :

34 ns

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Series :

HEXFET®

Nominal Vgs :

1 V

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Power Dissipation :

2.5W

Continuous Drain Current (ID) :

7.3A

FET Technology :

METAL-OXIDE SEMICONDUCTOR