IRF7389

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2004

Pulsed Drain Current-Max (IDM) :

30A

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Elements :

2

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.029Ohm

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

7.3A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Packaging :

Tube

Avalanche Energy Rating (Eas) :

82 mJ

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

JEDEC-95 Code :

MS-012AA

JESD-30 Code :

R-PDSO-G8

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Number of Terminations :

8

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

30V

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Finish :

TIN LEAD

Operating Mode :

ENHANCEMENT MODE

FET Type :

N and P-Channel

Terminal Position :

Dual

Power - Max :

2.5W

Peak Reflow Temperature (Cel) :

245

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.8A, 10V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Surface Mount :

yes