IRF7379TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5.8A 4.3A

Width :

3.9878mm

Radiation Hardening :

No

FET Type :

N and P-Channel

Power Dissipation :

2.5W

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Lead Free :

Lead Free

Length :

4.9784mm

Drain to Source Breakdown Voltage :

30V

Base Part Number :

IRF7379PBF

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.045Ohm

Number of Terminations :

8

Current Rating :

5.8A

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Series :

HEXFET®

FET Feature :

Standard

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

45m Ω @ 5.8A, 10V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

46A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Published :

2004

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Height :

1.4986mm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Power Dissipation :

2.5W

Continuous Drain Current (ID) :

5.8A