IRF7379QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Mount :

Surface Mount

Power Dissipation :

2.5W

RoHS Status :

RoHS Compliant

Max Power Dissipation :

2.5W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

1V @ 250μA

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Base Part Number :

IRF7379QPBF

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Published :

2010

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

Length :

4.9784mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

3.9878mm

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

FET Type :

N and P-Channel

Continuous Drain Current (ID) :

5.8A

Gate to Source Voltage (Vgs) :

20V

Height :

1.4986mm

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

5.8A 4.3A

Radiation Hardening :

No

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

45m Ω @ 5.8A, 10V