IRF7379PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

18 ns

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Max Power Dissipation :

2.5W

Terminal Position :

Dual

Dual Supply Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

ECCN Code :

EAR99

Radiation Hardening :

No

Power Dissipation :

2.5W

FET Type :

N and P-Channel

Row Spacing :

6.3 mm

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Current Rating :

5.8A

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

46A

Mounting Type :

Surface Mount

Mount :

Surface Mount

Width :

3.9878mm

Number of Pins :

8

Threshold Voltage :

1V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Termination :

SMD/SMT

Drain-source On Resistance-Max :

0.045Ohm

Length :

4.9784mm

Rds On (Max) @ Id, Vgs :

45m Ω @ 5.8A, 10V

Number of Terminations :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Temperature :

-55°C~150°C TJ

Published :

2004

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5.8A 4.3A

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Nominal Vgs :

1 V

Turn-Off Delay Time :

25 ns

Rise Time :

17ns

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Base Part Number :

IRF7379PBF

Continuous Drain Current (ID) :

4.3A

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Feature :

Standard

Height :

1.4986mm

Packaging :

Tube

Number of Elements :

2