IRF7350PBF
- Mfr.Part #
- IRF7350PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 100V 8SOIC
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- FET Feature :
- Standard
- Resistance :
- 210mOhm
- Nominal Vgs :
- 4 V
- Length :
- 5mm
- Lead Free :
- Lead Free
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Width :
- 4mm
- Dual Supply Voltage :
- 100V
- Rds On (Max) @ Id, Vgs :
- 210mOhm @ 2.1A, 10V
- Min Operating Temperature :
- -55°C
- Base Part Number :
- IRF7350PBF
- Turn-Off Delay Time :
- 30 ns
- Rise Time :
- 13ns
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 380pF
- Max Operating Temperature :
- 150°C
- Continuous Drain Current (ID) :
- 2.1A
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A 1.5A
- Number of Pins :
- 8
- Fall Time (Typ) :
- 40 ns
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2004
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 100V
- Number of Elements :
- 2
- Max Power Dissipation :
- 2W
- FET Type :
- N and P-Channel
- Power - Max :
- 2W
- Current Rating :
- 2.1A
- Packaging :
- Tube
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 10V
- Supplier Device Package :
- 8-SO
- Height :
- 1.5mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 25V
- Power Dissipation :
- 2W
- Rds On Max :
- 210 mΩ
- Termination :
- SMD/SMT
- Threshold Voltage :
- 4V
- Drain to Source Voltage (Vdss) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Resistance :
- 480mOhm
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRF7350PBF

IRF7350PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at
IRF7350PBF Description
The Infineon Technologies IRF7350PBF is a dual N and P channel HEXFET? power MOSFET from International Rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF7350PBF Features
-
Ultra-Low On-Resistance
-
Dual N and P Channel MOSFET
-
Surface Mount
-
Available in Tape and Reel
-
Lead-Free
IRF7350PBF Applications
-
DC motor drives
-
Load management applications
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