IRF7343TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

HEXFET®

Published :

2004

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Max Junction Temperature (Tj) :

150°C

Resistance :

50mOhm

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Current Rating :

4.7A

ECCN Code :

EAR99

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e3

Mount :

Surface Mount

FET Type :

N and P-Channel

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

22 ns

Power Dissipation :

2W

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Factory Lead Time :

12 Weeks

Max Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

4.7A

Terminal Position :

Dual

Threshold Voltage :

1V

Number of Pins :

8

Turn-Off Delay Time :

43 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Base Part Number :

IRF7343PBF

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.7A, 10V

Width :

3.9878mm

Contact Plating :

Tin

FET Feature :

Standard

Row Spacing :

6.3 mm

Rise Time :

10ns

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

8.3 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Nominal Vgs :

1 V

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

55V

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Length :

4.9784mm

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

4.7A 3.4A

Number of Elements :

2

Height :

1.75mm

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V