IRF7342TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

1.75mm

Element Configuration :

Dual

ECCN Code :

EAR99

Max Power Dissipation :

2W

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Width :

3.9878mm

Resistance :

105mOhm

Number of Terminations :

8

Number of Pins :

8

Transistor Application :

SWITCHING

Radiation Hardening :

No

Rise Time :

10ns

Current - Continuous Drain (Id) @ 25°C :

3.4A

Avalanche Energy Rating (Eas) :

114 mJ

Factory Lead Time :

12 Weeks

Row Spacing :

6.3 mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Turn-Off Delay Time :

43 ns

Continuous Drain Current (ID) :

-3.4A

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

22 ns

REACH SVHC :

No SVHC

Number of Channels :

2

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

-55V

Series :

HEXFET®

Additional Feature :

ULTRA LOW RESISTANCE

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Max Junction Temperature (Tj) :

150°C

Recovery Time :

80 ns

Number of Elements :

2

Transistor Element Material :

SILICON

FET Type :

2 P-Channel (Dual)

Threshold Voltage :

-1V

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Current Rating :

-3.4A

Nominal Vgs :

-1 V

Voltage - Rated DC :

-55V

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Contains Lead, Lead Free

Length :

4.9784mm

Published :

1999

Base Part Number :

IRF7342PBF

Turn On Delay Time :

14 ns

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W