IRF7342PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

Avalanche Energy Rating (Eas) :

114 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

1999

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G8

Power - Max :

2W

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Base Part Number :

IRF7342PBF

DS Breakdown Voltage-Min :

55V

Pulsed Drain Current-Max (IDM) :

27A

Terminal Form :

Gull wing

JESD-609 Code :

e3

Factory Lead Time :

39 Weeks

Peak Reflow Temperature (Cel) :

260

FET Type :

2 P-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

3.4A

FET Feature :

Logic Level Gate

Series :

HEXFET®

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.105Ohm

Power Dissipation-Max (Abs) :

2W

Drain Current-Max (Abs) (ID) :

3.4A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

MS-012AA

Drain to Source Voltage (Vdss) :

55V

Qualification Status :

Not Qualified

Additional Feature :

High Reliability