IRF7341TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Nominal Vgs :

1 V

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Threshold Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

55V

FET Type :

2 N-Channel (Dual)

Voltage - Rated DC :

55V

Published :

2004

Mounting Type :

Surface Mount

Width :

3.9878mm

Length :

4.9784mm

Drain to Source Breakdown Voltage :

55V

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Radiation Hardening :

No

Resistance :

50mOhm

Packaging :

Tape and Reel (TR)

Height :

1.75mm

Fall Time (Typ) :

13 ns

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

5.1A

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

4.7A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Contact Plating :

Tin

Turn On Delay Time :

8.3 ns

Recovery Time :

90 ns

Terminal Form :

Gull wing

Base Part Number :

IRF7341PBF

Power Dissipation :

2W

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

Row Spacing :

6.3 mm

Turn-Off Delay Time :

32 ns

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

140 mJ

Series :

HEXFET®

Number of Terminations :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Mount :

Surface Mount

Current Rating :

4.7A

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Pins :

8

Transistor Element Material :

SILICON

Number of Channels :

2

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Max Junction Temperature (Tj) :

150°C

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.7A, 10V

Rise Time :

3.2ns

Max Power Dissipation :

2W

ECCN Code :

EAR99