IRF7341QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

7.7ns

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 25V

Input Capacitance :

780pF

Gate to Source Voltage (Vgs) :

20V

Published :

2005

Height :

1.5mm

Turn-Off Delay Time :

31 ns

Power - Max :

2.4W

Turn On Delay Time :

9.2 ns

Mount :

Surface Mount

Max Power Dissipation :

2.4W

FET Type :

2 N-Channel (Dual)

Series :

HEXFET®

Continuous Drain Current (ID) :

4.7A

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

5.1A

Max Operating Temperature :

175°C

Rds On Max :

50 mΩ

Number of Pins :

8

Fall Time (Typ) :

12.5 ns

Packaging :

Cut Tape (CT)

Supplier Device Package :

8-SO

Base Part Number :

IRF7341QPBF

Length :

5mm

Drain to Source Resistance :

65mOhm

Rds On (Max) @ Id, Vgs :

50mOhm @ 5.1A, 10V

RoHS Status :

RoHS Compliant

Width :

4mm

Power Dissipation :

2.4W

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Number of Elements :

2

Drain to Source Voltage (Vdss) :

55V