IRF7331TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

1340pF @ 16V

DS Breakdown Voltage-Min :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Number of Terminations :

8

Power - Max :

2W

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G8

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Drain to Source Voltage (Vdss) :

20V

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2007

Series :

HEXFET®

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

7A

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Drain-source On Resistance-Max :

0.03Ohm

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

7A

Surface Mount :

yes