IRF7331PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

2W

FET Feature :

Logic Level Gate

Surface Mount :

yes

Number of Elements :

2

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1340pF @ 16V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

7A

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G8

Operating Temperature :

-55°C~150°C TJ

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.03Ohm

JEDEC-95 Code :

MS-012AA

Power - Max :

2W

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

7A

FET Type :

2 N-Channel (Dual)

Number of Terminations :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

HEXFET®

ECCN Code :

EAR99

Base Part Number :

IRF7331PBF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Packaging :

Tube

Terminal Form :

Gull wing