IRF7329TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Power Dissipation :

2W

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Published :

2004

Rds On (Max) @ Id, Vgs :

17m Ω @ 9.2A, 4.5V

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 10V

Radiation Hardening :

No

Rise Time :

8.6ns

Voltage - Rated DC :

-12V

Turn On Delay Time :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 4.5V

Drain to Source Breakdown Voltage :

-12V

Drain-source On Resistance-Max :

0.017Ohm

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

Logic Level Gate

Height :

1.4986mm

Width :

3.9878mm

Max Power Dissipation :

2W

Mount :

Surface Mount

Turn-Off Delay Time :

340 ns

Drain to Source Voltage (Vdss) :

12V

Number of Elements :

2

Current Rating :

-9.2A

Number of Terminations :

8

Length :

4.9784mm

Series :

HEXFET®

FET Type :

2 P-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Base Part Number :

IRF7329PBF

Vgs(th) (Max) @ Id :

900mV @ 250μA

Element Configuration :

Dual

Continuous Drain Current (ID) :

9.2A

Factory Lead Time :

12 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

260 ns