IRF7329TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Published :

2004

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.017Ohm

Number of Terminations :

8

Power - Max :

2W

Qualification Status :

Not Qualified

FET Type :

2 P-Channel (Dual)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

900mV @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 10V

Drain Current-Max (Abs) (ID) :

9.2A

Series :

HEXFET®

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

12V

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

9.2A

JESD-30 Code :

R-PDSO-G8

DS Breakdown Voltage-Min :

12V

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 4.5V

Surface Mount :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

17m Ω @ 9.2A, 4.5V

Number of Elements :

2