IRF7329PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Height :

1.4986mm

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Number of Elements :

2

JESD-609 Code :

e3

Lead Free :

Lead Free

Row Spacing :

6.3 mm

Series :

HEXFET®

Turn-Off Delay Time :

340 ns

Rds On (Max) @ Id, Vgs :

17m Ω @ 9.2A, 4.5V

Resistance :

17mOhm

Drain to Source Voltage (Vdss) :

12V

Current Rating :

-9.2A

Number of Terminations :

8

Voltage - Rated DC :

-12V

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 4.5V

ECCN Code :

EAR99

Nominal Vgs :

-900 mV

Termination :

SMD/SMT

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

900mV @ 250μA

Radiation Hardening :

No

Packaging :

Tube

Power Dissipation :

2W

Gate to Source Voltage (Vgs) :

8V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 10V

REACH SVHC :

No SVHC

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-12V

Factory Lead Time :

13 Weeks

Element Configuration :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

Logic Level Gate

Length :

4.9784mm

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

-9.2A

Additional Feature :

High Reliability

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

-900mV

Dual Supply Voltage :

-12V

Max Power Dissipation :

2W

Fall Time (Typ) :

260 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 P-Channel (Dual)

Current - Continuous Drain (Id) @ 25°C :

9.2A

Rise Time :

8.6ns

Base Part Number :

IRF7329PBF

Width :

3.9878mm

Published :

2004

Turn On Delay Time :

10 ns