IRF7328TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

21m Ω @ 8A, 10V

Drain to Source Breakdown Voltage :

-30V

Resistance :

21mOhm

Contact Plating :

Tin

Voltage - Rated DC :

-30V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Width :

3.9878mm

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Published :

2004

Drain to Source Voltage (Vdss) :

30V

Height :

1.75mm

Input Capacitance (Ciss) (Max) @ Vds :

2675pF @ 25V

Max Power Dissipation :

2W

Recovery Time :

56 ns

Series :

HEXFET®

Row Spacing :

6.3 mm

Fall Time (Typ) :

98 ns

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Termination :

SMD/SMT

Drain Current-Max (Abs) (ID) :

8A

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2W

Lead Free :

Lead Free

Rise Time :

15ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Turn On Delay Time :

13 ns

Current Rating :

-8A

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

-8A

Dual Supply Voltage :

-30V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Additional Feature :

ULTRA LOW RESISTANCE

Number of Channels :

2

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

8A

ECCN Code :

EAR99

FET Type :

2 P-Channel (Dual)

Factory Lead Time :

12 Weeks

Base Part Number :

IRF7328PBF

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Threshold Voltage :

-1V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

-2.5 V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Junction Temperature (Tj) :

150°C

Length :

4.9784mm

Number of Pins :

8

Turn-Off Delay Time :

198 ns