IRF7328PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-30 Code :

R-PDSO-G8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

8A

Transistor Element Material :

SILICON

Power - Max :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Published :

2010

Base Part Number :

IRF7328PBF

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

30V

FET Type :

2 P-Channel (Dual)

FET Feature :

Logic Level Gate

Drain-source On Resistance-Max :

0.021Ohm

Current - Continuous Drain (Id) @ 25°C :

8A

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

30V

Additional Feature :

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Form :

Gull wing

Power Dissipation-Max (Abs) :

2W

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2675pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

32A

Rds On (Max) @ Id, Vgs :

21m Ω @ 8A, 10V

JEDEC-95 Code :

MS-012AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HEXFET®

Number of Terminations :

8