IRF7324TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

IRF7324PBF

Current Rating :

-9A

Turn-Off Delay Time :

170 ns

FET Type :

2 P-Channel (Dual)

Published :

2004

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

71A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

4.9784mm

Number of Pins :

8

Voltage - Rated DC :

-20V

ECCN Code :

EAR99

Turn On Delay Time :

17 ns

Drain to Source Voltage (Vdss) :

20V

Resistance :

18mOhm

Mounting Type :

Surface Mount

Width :

3.9878mm

Fall Time (Typ) :

190 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

9A

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Number of Terminations :

8

Continuous Drain Current (ID) :

-9A

Lead Free :

Contains Lead, Lead Free

Drain Current-Max (Abs) (ID) :

9A

Series :

HEXFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

12V

Terminal Finish :

Matte Tin (Sn)

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Number of Elements :

2

Drain to Source Breakdown Voltage :

-20V

Input Capacitance (Ciss) (Max) @ Vds :

2940pF @ 15V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

18m Ω @ 9A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 5V

Threshold Voltage :

-1V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Max Power Dissipation :

2W

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Height :

1.75mm

Recovery Time :

270 ns

Power Dissipation :

2W

Packaging :

Tape and Reel (TR)

Rise Time :

36ns

Additional Feature :

High Reliability