IRF7324

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

18m Ω @ 9A, 4.5V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2940pF @ 15V

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

9A

Packaging :

Tube

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

2 P-Channel (Dual)

Terminal Finish :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Power - Max :

2W

DS Breakdown Voltage-Min :

20V

Drain-source On Resistance-Max :

0.018Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

JESD-30 Code :

R-PDSO-G8

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 5V

Mounting Type :

Surface Mount

Number of Terminations :

8

Series :

HEXFET®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

9A

Number of Elements :

2

JEDEC-95 Code :

MS-012AA

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

Logic Level Gate

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

71A