IRF7316PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Power Dissipation-Max (Abs) :

2W

Terminal Form :

Gull wing

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

140 mJ

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Base Part Number :

IRF7316PBF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Transistor Application :

SWITCHING

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn)

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

4.9A

Number of Terminations :

8

JEDEC-95 Code :

MS-012AA

Drain-source On Resistance-Max :

0.058Ohm

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

4.9A

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Pulsed Drain Current-Max (IDM) :

30A

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 P-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

58m Ω @ 4.9A, 10V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

FET Feature :

Logic Level Gate