IRF7314TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

49 ns

Resistance :

58mOhm

ECCN Code :

EAR99

JESD-609 Code :

e3

Current Rating :

-5.3A

Max Power Dissipation :

2W

Nominal Vgs :

-700 mV

Threshold Voltage :

-700mV

Turn-Off Delay Time :

41 ns

Power Dissipation :

2W

REACH SVHC :

No SVHC

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

58m Ω @ 2.9A, 4.5V

Drain to Source Breakdown Voltage :

-20V

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Turn On Delay Time :

15 ns

Base Part Number :

IRF7314PBF

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Height :

1.4986mm

Transistor Application :

SWITCHING

Element Configuration :

Dual

Contact Plating :

Tin

Recovery Time :

71 ns

Gate to Source Voltage (Vgs) :

12V

Length :

4.9784mm

Continuous Drain Current (ID) :

-5.3A

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

20V

Width :

3.9878mm

FET Feature :

Logic Level Gate

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

5.3A

Number of Elements :

2

Number of Pins :

8

Vgs(th) (Max) @ Id :

700mV @ 250μA

FET Type :

2 P-Channel (Dual)

Terminal Form :

Gull wing

Voltage - Rated DC :

-20V

Rise Time :

40ns

Published :

1997

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Row Spacing :

6.3 mm

Avalanche Energy Rating (Eas) :

150 mJ

Additional Feature :

AVALANCHE RATED