IRF7314QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On Max :

58 mΩ

Max Power Dissipation :

2.4W

Drain to Source Resistance :

98mOhm

Mounting Type :

Surface Mount

Number of Elements :

2

Max Operating Temperature :

175°C

Height :

1.4986mm

Supplier Device Package :

8-SO

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

5.2A

Power - Max :

2.4W

Series :

HEXFET®

Packaging :

Cut Tape (CT)

Base Part Number :

IRF7314QPBF

FET Type :

2 P-Channel (Dual)

Input Capacitance :

913pF

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Min Operating Temperature :

-55°C

Turn On Delay Time :

18 ns

Vgs(th) (Max) @ Id :

700mV @ 250μA

Rise Time :

26ns

Width :

3.9878mm

Published :

2010

FET Feature :

Logic Level Gate

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Fall Time (Typ) :

38 ns

Continuous Drain Current (ID) :

-5.2A

Length :

4.9784mm

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

913pF @ 15V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2.4W

Turn-Off Delay Time :

41 ns

Rds On (Max) @ Id, Vgs :

58mOhm @ 5.2A, 4.5V